TPU v1 accelerator architecture
First-generation inference architecture with systolic matrix arithmetic, explicit buffers, and host-directed operations.
2 sources · structured · 2 connectionsTHE CONNECTED COLLECTION
Architecture is a relationship, not a specification label. Follow companies, instruction sets, cores, processes, packages and source documents into the objects they explain.
First-generation inference architecture with systolic matrix arithmetic, explicit buffers, and host-directed operations.
2 sources · structured · 2 connectionsThe Acorn organization credited with the processor design in VLSI’s ARM family manual.
2 sources · structured · 1 connectionsAMD in the semiconductor source network. Explore its documented designs, technology and publications.
1 sources · basic · 3 connectionsArm in the semiconductor source network. Explore its documented designs, technology and publications.
1 sources · basic · 2 connectionsGigaDevice in the semiconductor source network. Explore its documented designs, technology and publications.
1 sources · basic · 1 connectionsGoogle in the semiconductor source network. Explore its documented designs, technology and publications.
1 sources · basic · 2 connectionsIntel in the semiconductor source network. Explore its documented designs, technology and publications.
1 sources · basic · 3 connectionsNVIDIA in the semiconductor source network. Explore its documented designs, technology and publications.
1 sources · basic · 0 connectionsTSMC in the semiconductor source network. Explore its documented designs, technology and publications.
1 sources · basic · 2 connectionsArmv7-M processor core documented by ARM DDI 0337H; optional implementation features vary.
1 sources · structured · 4 connectionsimec describes CFET as stacked nMOS and pMOS with monolithic and sequential integration schemes under research.
1 sources · researched · 0 connectionsWolfspeed lists discrete SiC MOSFETs for power systems, with package and blocking-voltage filters.
1 sources · researched · 0 connectionsA FinFET is contrasted with GAA by gate material on three channel sides.
1 sources · researched · 1 connectionsIn a GAA transistor, gate material completely encircles the channel; imec reports Si GAA nMOS and pMOS research devices.
3 sources · researched · 1 connectionsThis IEDM 2006 implementation combines SOI CMOS, enhanced strain, immersion lithography and porous low-k back-end dielectrics. IBM reports functional 0.37 µm² SRAM cells and PFET/NFET saturation drive currents of 840/1240 µA per µm at 1.0 V. These are process demonstration results; the nominal 45 nm label is not a measurement of every transistor dimension.
1 sources · structured · 0 connectionsBFP450 is a surface-mount silicon NPN transistor for wideband RF amplification. Its datasheet separates minimum breakdown limits from typical small-signal gain and linearity. At 900 MHz, 3 V collector-emitter bias and 90 mA collector current, the reported maximum power gain is 23.5 dB while transducer gain is 19 dB. These metrics use different gain definitions; they must not be treated as interchangeable amplifier performance or as guaranteed values across frequency and bias.
1 sources · structured · 0 connectionsA 1200 V trench and fieldstop IGBT supplied as bare die for power modules. The nominal 25 A rating assumes a packaged module at 100°C case temperature. Its 2.07 V maximum saturation voltage is a 25°C static on-wafer result; the separate 150°C specification is 2.25 V typical. These conditions prevent a misleading comparison between nominal current, absolute ratings and hot-junction behavior.
2 sources · structured · 0 connectionsA commercial P-channel planar power MOSFET in a Micro-8 package. Its −30 V voltage limit and −7 A current rating describe different specified operating constraints; neither is a measured efficiency result. The 26 mΩ maximum on-resistance applies at −10 V gate drive, −7 A drain current and 25°C junction temperature.
2 sources · structured · 0 connectionsHamamatsu identifies Si/InGaAs photodiode families, arrays/modules, and light-position, imaging, spectrophotometry, and near-infrared applications.
1 sources · researched · 0 connectionsThis educational cross-section diagram identifies the source, drain, gate, insulating layer and substrate of a MOSFET. It is a schematic, not a TEM or SEM micrograph, and it provides no measured process dimensions.
1 sources · researched · 2 connectionsInfineon’s catalogue includes Si/SiC products, n/p-channel families, modules, bare die, and industrial/automotive contexts.
1 sources · researched · 0 connectionsA photographed discrete power MOSFET in a through-hole package. The visible metal tab, package body and three leads show the external assembly. This photograph does not establish the internal cell structure, voltage rating or process technology.
1 sources · researched · 1 connectionsimec identifies vertically stacked nanosheets as a GAA implementation in scaling research.
1 sources · researched · 0 connectionsimec reported vertically stacked-nanowire GAA research with Si nMOS/pMOS results; it is not a commercial product claim.
1 sources · researched · 0 connectionsSource document cited by Museum technical exhibits. Follow the publisher or archive link to read the original.
1 sources · basic · 1 connectionsPrimary-source reference used for the bounded ARM2 fact review. Access and verification limits are recorded with the source.
1 sources · structured · 1 connectionsPrimary-source reference used for the bounded ARM2 fact review. Access and verification limits are recorded with the source.
1 sources · structured · 1 connectionsSource document cited by Museum technical exhibits. Follow the publisher or archive link to read the original.
1 sources · basic · 0 connectionsSource document cited by Museum technical exhibits. Follow the publisher or archive link to read the original.
1 sources · basic · 1 connectionsSource document cited by Museum technical exhibits. Follow the publisher or archive link to read the original.
1 sources · basic · 1 connectionsSource document cited by Museum technical exhibits. Only indexed excerpts were verified in this pass.
1 sources · basic · 1 connectionsSource document cited by Museum technical exhibits. Follow the publisher or archive link to read the original.
1 sources · basic · 1 connectionsSource document cited by Museum technical exhibits. Follow the publisher or archive link to read the original.
1 sources · basic · 1 connectionsSource document cited by Museum technical exhibits. Follow the publisher or archive link to read the original.
1 sources · basic · 1 connectionsPrimary-source reference used for the bounded ARM2 fact review. Access and verification limits are recorded with the source.
1 sources · structured · 1 connectionsSource document cited by Museum technical exhibits. Follow the publisher or archive link to read the original.
1 sources · basic · 1 connectionsSource document cited by Museum technical exhibits. Follow the publisher or archive link to read the original.
1 sources · basic · 1 connectionsSource document cited by Museum technical exhibits. Follow the publisher or archive link to read the original.
1 sources · basic · 1 connectionsSource document cited by Museum technical exhibits. Follow the publisher or archive link to read the original.
1 sources · basic · 1 connectionsSource document cited by Museum technical exhibits. Follow the publisher or archive link to read the original.
1 sources · basic · 1 connectionsSource document cited by Museum technical exhibits. Follow the publisher or archive link to read the original.
1 sources · basic · 1 connectionsSource document cited by Museum technical exhibits. Only indexed excerpts were verified in this pass.
1 sources · basic · 1 connectionsSource document cited by Museum technical exhibits. Follow the publisher or archive link to read the original.
1 sources · basic · 1 connectionsOriginal Intel presentation used to verify process dimensions; linked as a document reference.
1 sources · structured · 2 connectionsSource document cited by Museum technical exhibits. Follow the publisher or archive link to read the original.
1 sources · basic · 1 connectionsSource document cited by Museum technical exhibits. Only indexed excerpts were verified in this pass.
1 sources · basic · 1 connectionsSource document cited by Museum technical exhibits. Follow the publisher or archive link to read the original.
1 sources · basic · 1 connectionsSource document cited by Museum technical exhibits. Follow the publisher or archive link to read the original.
1 sources · basic · 1 connectionsSource document cited by Museum technical exhibits. Only indexed excerpts were verified in this pass.
1 sources · basic · 1 connectionsSource document cited by Museum technical exhibits. Follow the publisher or archive link to read the original.
1 sources · basic · 1 connectionsSource document cited by Museum technical exhibits. Follow the publisher or archive link to read the original.
1 sources · basic · 1 connectionsSource document cited by Museum technical exhibits. Follow the publisher or archive link to read the original.
1 sources · basic · 1 connectionsSource document cited by Museum technical exhibits. Follow the publisher or archive link to read the original.
1 sources · basic · 1 connectionsSource document cited by Museum technical exhibits. Follow the publisher or archive link to read the original.
1 sources · basic · 1 connectionsA scalable SoC automated-test platform.
1 sources · researched · 0 connectionsApplied's CMP solution described for controlling copper dishing ahead of hybrid-bond annealing.
1 sources · researched · 0 connectionsA 150/200 mm CMP family with integrated post-CMP cleaning options.
1 sources · researched · 0 connectionsA CVD platform for semiconductor film deposition across logic, DRAM, NAND and specialty applications.
1 sources · researched · 0 connectionsASM's epitaxy tool for critical 300 mm transistor and memory applications.
1 sources · researched · 0 connectionsASML's 0.33-NA EUV scanner for 300 mm wafer exposure.
1 sources · researched · 0 connectionsA high-energy ion-implant family using RF LINAC beamline technology.
1 sources · researched · 0 connectionsAn i-line stepper for advanced-packaging lithography.
1 sources · researched · 0 connectionsA single-spindle automatic dicing saw. DISCO marks production of this model as ended.
1 sources · researched · 0 connectionsEUV lithography transfers patterns using light with a wavelength of 13.5 nm. EUV systems print selected intricate layers; DUV systems remain part of the same manufacturing flow. Light wavelength should not be confused with a process node label or the final printed feature size.
1 sources · researched · 1 connectionsAn automated system for collective die-to-wafer fusion and hybrid bonding in high-volume manufacturing.
1 sources · researched · 0 connectionsAn electron-beam inspection/metrology system for wide-area semiconductor inspection.
1 sources · researched · 0 connectionsKLA's unpatterned-wafer inspection system, documented for 45 nm generation requirements.
1 sources · researched · 0 connectionsLam's conductor-etch family for electrically active device materials.
1 sources · researched · 0 connectionsA 300 mm ArF immersion scanner with 1.35 NA.
1 sources · researched · 0 connectionsAn in-line materials-metrology tool combining XPS and low-energy XRF.
1 sources · researched · 0 connectionsA panel-level packaging system combining automated inspection and 3D metrology.
1 sources · researched · 0 connectionsA flash-lamp annealer for millisecond thermal-dose control.
1 sources · researched · 0 connectionsA 300 mm single-wafer cleaner with a 24-chamber configuration.
1 sources · researched · 0 connectionsSemiconductor metrology measures process features, while inspection looks for defects and other deviations. Applied Materials describes applications across FEOL and BEOL. A microscope image needs its method and specimen context before dimensions or failure mechanisms can be inferred.
1 sources · researched · 1 connectionsTEL's 300 mm coater/developer for 10 nm and beyond process flows.
1 sources · researched · 0 connectionsA configurable semiconductor test platform with digital, RF, AC and DC instruments.
1 sources · researched · 0 connectionsA Veeco MOCVD system based on TurboDisc technology for compound-semiconductor epitaxy.
1 sources · researched · 0 connectionsM-profile instruction-set architecture implemented by Cortex-M3.
1 sources · structured · 2 connectionsInstruction-set family originating with the Intel 8086; extensions must be tied to their own generations.
1 sources · structured · 2 connectionsSilicon is a semiconductor material used as the basis of many integrated circuits. A material, a wafer and a finished chip are different objects: follow their connections to see where each belongs.
1 sources · researched · 1 connectionsHBM combines stacked DRAM dies with a wide interface for high-throughput data transfer. TSVs connect layers within a stack. Capacity, transfer rate and stacking details belong to a named generation and product; this overview does not assign one vendor’s specifications to every HBM device.
1 sources · researched · 1 connectionsThree circuit boards show packaged memory devices and module connectors. Visible labels include Intel Flash and Micron and Samsung module markings. The Commons filename calls the image RAM chips, but the photograph includes different memory assemblies; it is not an HBM stack or a DRAM cell micrograph.
1 sources · researched · 1 connectionsThe ARM2 implementation documented by Acorn: three pipeline stages and a 2 µm CMOS process. Introduction timing and unverified ISA/cache fields remain separate from checked facts.
5 sources · structured · 6 connectionsCPU microarchitecture named by AMD for the original Ryzen desktop generation. Follow the linked product and manufacturer evidence.
3 sources · structured · 64 connectionsAMD CPU microarchitecture documented in its ISSCC 2020 core presentation; cache configuration varies by implementation.
3 sources · structured · 72 connectionsApple packaging architecture joining two M1 Max dies with a silicon interposer.
1 sources · structured · 2 connections48-pin low-profile quad flat package listed for GD32F103CBT6. This is a package class, not a unique die.
1 sources · structured · 1 connectionsSoIC is TSMC’s platform for integrating chiplets in three dimensions. Its chiplet integration is distinct from a photograph of a finished package: the bonded interfaces and internal connections require their own evidence. The source explains wafer-on-wafer and chip-on-wafer integration options.
1 sources · researched · 0 connectionsFederico Faggin led design work on the Intel 4004 project after Ted Hoff. Intel’s history credits Faggin, Hoff, Stan Mazor and Busicom’s Masatoshi Shima: the programmable processor emerged from a team and a calculator project.
1 sources · structured · 1 connectionsMorris Chang founded TSMC in 1987. The company’s own history frames its role around manufacturing customer-designed chips, connecting this founder’s story to the dedicated foundry business model.
1 sources · structured · 1 connectionsIntel’s 2014 process uses second-generation tri-gate FinFETs. The manufacturer disclosed 42 nm fin pitch, 70 nm gate pitch and 52 nm interconnect pitch; these physical dimensions are distinct from the 14 nm generation name. Intel identified Core M as the first product manufactured on the process and reported volume production in August 2014. This entry describes that dated process implementation, without assigning those pitches to every later Intel 14 nm variant.
2 sources · structured · 3 connectionsSamsung SF2 is a named foundry process. Its dated PPA claims retain the manufacturer’s own reference node and measurement conditions.
2 sources · structured · 0 connectionsTSMC N2 is a named foundry process. Its dated PPA claims retain the manufacturer’s own reference node and measurement conditions.
2 sources · structured · 0 connectionsTSMC 7nm FinFET process technology; distinct from the later N7+ EUV process.
1 sources · structured · 1 connectionsBack end of line refers to the interconnect portion of wafer processing. Metrology and inspection are used across front-end and back-end-of-line applications. BEOL wiring should be distinguished from the later assembly, packaging and test stages.
1 sources · researched · 1 connectionsCPU socket specified for the complete Ryzen 5 3600 processor; not a bare-CCD package type.
1 sources · structured · 3 connectionsA wafer is a thin semiconductor substrate on which multiple integrated circuits are built. This photograph shows the patterned surface of a 12-inch silicon wafer; its colors and visible patterns do not establish a process node or a specific chip identity.
2 sources · researched · 2 connectionsDates and historical archive claims retain their original capture context. A process marketing name is not a measured feature dimension.
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