VLSI KoreaCompare a planar gate schematic with the gate-surrounding-channel geometry of GAA; no equal-dimension claim.
imec · EvidenceDEVICE
Gate-all-around transistor
In a GAA transistor, gate material completely encircles the channel; imec reports Si GAA nMOS and pMOS research devices.
GAAGAAFETnanosheetnanowire게이트 올 어라운드
- operating Family
- MOSFET
- gate Geometry
- gate-all-around
- substrate
- silicon
- polarity
- nMOS · pMOS
Specifications
5 SOURCE-LINKED FIELDS| Gate geometry | Manufacturer / primary sourceimec Scope: concept |
|---|---|
| Research example | Manufacturer / primary sourceimec Scope: concept |
| Gate geometry | Manufacturer / primary sourceSamsung Electronics Scope: concept |
| Material/device evidence | Manufacturer / primary sourceimec Scope: concept Source date: 2018-12-03 |
| Research context | Manufacturer / primary sourceimec Scope: concept Source date: 2018-12-03 |
THE VISUAL EVIDENCE
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1 SOURCE-LINKED RELATIONSHIPSSources and historical context
Stacked nanowire gate-all-around transistors
imec · official-disclosure · primary source verified
Driving Semiconductor Performance with Gate-All-Around (GAA)
Samsung Electronics · official-disclosure · source linked
Imec improves performance and understanding of stacked nanowire Gate-All-Around transistors for N3 and beyond
imec · official-disclosure · source linked