SEMICONDUCTOR REFERENCE

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Find products, devices, processes and manufacturing tools with specifications and original sources.

15 recordsSort

GAA MOSFET

Source values retain units and entity scope. Open the citation on the record for conditions. Missing fields are unresearched; conflicting observations remain visible.
Compare	Entity	Device family	Gate geometry	Material / substrate	Polarity / configuration	Application
	Gate-all-around transistorIndustry · concept	unresearched	Gate surrounds the channelGate geometry	Si GAA nMOS and pMOS devicesMaterial/device evidence	unresearched	unresearched

device

Source values retain units and entity scope. Open the citation on the record for conditions. Missing fields are unresearched; conflicting observations remain visible.
Compare	Entity	Device family	Gate geometry	Material / substrate	Polarity / configuration	Application
	Planar MOSFET structureIndustry · concept	unresearched	unresearched	unresearched	unresearched	unresearched
	Power MOSFET package specimenUnidentified · concept	unresearched	unresearched	unresearched	unresearched	unresearched

process

Vendor PPA claims retain their own reference process and conditions. Node labels are not physical gate dimensions. Missing fields are unresearched; conflicting observations remain visible.
Compare	Entity	Transistor integration	Performance claim	Power claim	Density definition	PPA baseline
	Intel 14 nm (2014 disclosure)Intel · process variant · 2014	Second-generation tri-gate (FinFET)Transistor structure	unresearched	unresearched	unresearched	unresearched

FinFET

Source values retain units and entity scope. Open the citation on the record for conditions. Missing fields are unresearched; conflicting observations remain visible.
Compare	Entity	Device family	Gate geometry	Material / substrate	Polarity / configuration	Application
	FinFET logic transistorIndustry · concept	unresearched	Three channel sidesGate geometry	unresearched	unresearched	unresearched

nanowire GAA MOSFET

Source values retain units and entity scope. Open the citation on the record for conditions. Missing fields are unresearched; conflicting observations remain visible.
Compare	Entity	Device family	Gate geometry	Material / substrate	Polarity / configuration	Application
	Stacked-nanowire GAA transistorimec · research implementation · 2018	Si nMOS and pMOS GAA devicesDemonstrated device types	Vertically stacked nanowiresChannel implementation	unresearched	unresearched	unresearched

nanosheet GAA MOSFET

Source values retain units and entity scope. Open the citation on the record for conditions. Missing fields are unresearched; conflicting observations remain visible.
Compare	Entity	Device family	Gate geometry	Material / substrate	Polarity / configuration	Application
	Stacked-nanosheet GAA transistorimec · research implementation · 2018	unresearched	Vertically stacked nanosheetsChannel implementation	unresearched	unresearched	unresearched

CFET

Source values retain units and entity scope. Open the citation on the record for conditions. Missing fields are unresearched; conflicting observations remain visible.
Compare	Entity	Device family	Gate geometry	Material / substrate	Polarity / configuration	Application
	Complementary FET research structureimec · research implementation · 2022	unresearched	unresearched	unresearched	nMOS and pMOS stacked on top of each otherComplementary stack	unresearched

MOSFET power portfolio

Source values retain units and entity scope. Open the citation on the record for conditions. Missing fields are unresearched; conflicting observations remain visible.
Compare	Entity	Device family	Gate geometry	Material / substrate	Polarity / configuration	Application
	Power MOSFETInfineon Technologies · product family	unresearched	unresearched	Si and SiC MOSFET modulesMaterials	N-channel and P-channel product familiesPolarity	unresearched

discrete SiC MOSFET

Source values retain units and entity scope. Open the citation on the record for conditions. Missing fields are unresearched; conflicting observations remain visible.
Compare	Entity	Device family	Gate geometry	Material / substrate	Polarity / configuration	Application
	Discrete silicon-carbide MOSFETWolfspeed · product family	Discrete silicon-carbide MOSFETsProduct family	unresearched	unresearched	unresearched	1 kW to 60 kW stated rangePower context

photodiode detector

Source values retain units and entity scope. Open the citation on the record for conditions. Missing fields are unresearched; conflicting observations remain visible.
Compare	Entity	Device family	Gate geometry	Material / substrate	Polarity / configuration	Application
	PhotodiodeHamamatsu Photonics · product family	Si and Si PIN photodiodesSi family	unresearched	unresearched	unresearched	Light position detection, imaging and spectrophotometryArray applications

power mosfet

Source values retain units and entity scope. Open the citation on the record for conditions. Missing fields are unresearched; conflicting observations remain visible.
Compare	Entity	Device family	Gate geometry	Material / substrate	Polarity / configuration	Application
	Infineon IRF7726Infineon · product model	planar power MOSFETDevice family	planar cell structureGate geometry	unresearched	P-channelPolarity	unresearched