VLSI KoreaDEVICE
Infineon IRF7726
A commercial P-channel planar power MOSFET in a Micro-8 package. Its −30 V voltage limit and −7 A current rating describe different specified operating constraints; neither is a measured efficiency result. The 26 mΩ maximum on-resistance applies at −10 V gate drive, −7 A drain current and 25°C junction temperature.
- operating Family
- planar power MOSFET
- gate Geometry
- planar cell structure
- polarity
- P-channel
- integration
- discrete power MOSFET in Micro8 package
- research Commercial
- commercial product
Specifications
6 SOURCE-LINKED FIELDS| Connectivity & devices | |
|---|---|
| Device family | Manufacturer / primary sourceInfineon Technologies Scope: product-model |
| Additional specifications | |
| Gate geometry | Manufacturer / primary sourceInfineon Technologies Scope: product-model |
| Polarity | Manufacturer / primary sourceInfineon Technologies Scope: product-model |
| Drain-source voltage maximum | Manufacturer / primary sourceInfineon Technologies Scope: product-model Conditions: Absolute maximum rating |
| Continuous drain current | Manufacturer / primary sourceInfineon Technologies Scope: product-model Conditions: TA=25°C; VGS=−10 V |
| On-resistance maximum | Manufacturer / primary sourceInfineon Technologies Scope: product-model Conditions: VGS=−10 V; ID=−7 A; TJ=25°C |
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Sources and historical context
Infineon Technologies · official-disclosure · source linked
Infineon Technologies · official-disclosure · source linked