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Infineon BFP450
BFP450 is a surface-mount silicon NPN transistor for wideband RF amplification. Its datasheet separates minimum breakdown limits from typical small-signal gain and linearity. At 900 MHz, 3 V collector-emitter bias and 90 mA collector current, the reported maximum power gain is 23.5 dB while transducer gain is 19 dB. These metrics use different gain definitions; they must not be treated as interchangeable amplifier performance or as guaranteed values across frequency and bias.
- operating Family
- bipolar junction transistor
- substrate
- silicon
- polarity
- NPN
- integration
- surface-mount discrete transistor
- application
- wideband RF amplification
- research Commercial
- commercial device datasheet
Specifications
8 SOURCE-LINKED FIELDS| Connectivity & devices | |
|---|---|
| Device family | Manufacturer / primary sourceInfineon Technologies Scope: product-model |
| Additional specifications | |
| Material | Manufacturer / primary sourceInfineon Technologies Scope: product-model |
| Polarity | Manufacturer / primary sourceInfineon Technologies Scope: product-model |
| Application | Manufacturer / primary sourceInfineon Technologies Scope: product-model |
| Collector-emitter breakdown voltage minimum | Manufacturer / primary sourceInfineon Technologies Scope: product-model Conditions: IC=1 mA; IB=0 / open base; TA=25ยฐC |
| Maximum power gain typical | Manufacturer / primary sourceInfineon Technologies Scope: product-model Conditions: VCE=3 V; f=900 MHz; IC=90 mA |
| Transducer gain typical | Manufacturer / primary sourceInfineon Technologies Scope: product-model Conditions: VCE=3 V; f=900 MHz; IC=90 mA |
| Output third-order intercept typical | Manufacturer / primary sourceInfineon Technologies Scope: product-model Conditions: VCE=3 V; f=900 MHz; IC=90 mA; ZS=ZL=50 ฮฉ |
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Sources and historical context
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