VLSI KoreaDEVICE
Infineon IGC27T120T8L
A 1200 V trench and fieldstop IGBT supplied as bare die for power modules. The nominal 25 A rating assumes a packaged module at 100°C case temperature. Its 2.07 V maximum saturation voltage is a 25°C static on-wafer result; the separate 150°C specification is 2.25 V typical. These conditions prevent a misleading comparison between nominal current, absolute ratings and hot-junction behavior.
- operating Family
- IGBT
- gate Geometry
- TRENCHSTOP with fieldstop technology
- integration
- bare power-IGBT die
- application
- motor control
- research Commercial
- active commercial product
Specifications
9 SOURCE-LINKED FIELDS| Connectivity & devices | |
|---|---|
| Device family | Manufacturer / primary sourceInfineon Technologies Scope: silicon-die Source date: 2015-08-20 |
| Additional specifications | |
| Gate geometry | Manufacturer / primary sourceInfineon Technologies Scope: silicon-die |
| Application | Manufacturer / primary sourceInfineon Technologies Scope: silicon-die |
| Collector-emitter voltage maximum | Manufacturer / primary sourceInfineon Technologies Scope: silicon-die Conditions: Tvj=25°C Source date: 2015-08-20 |
| Nominal collector current | Manufacturer / primary sourceInfineon Technologies Scope: silicon-die Conditions: TC=100°C; chip packaged in a power module Source date: 2015-08-20 |
| Collector-emitter saturation voltage maximum | Manufacturer / primary sourceInfineon Technologies Scope: silicon-die Conditions: VGE=15 V; IC=25 A; Tvj=25°C; static on-wafer test Source date: 2015-08-20 |
| Collector-emitter saturation voltage typical | Manufacturer / primary sourceInfineon Technologies Scope: silicon-die Conditions: VGE=15 V; IC=25 A; Tvj=25°C; static on-wafer test Source date: 2015-08-20 |
| Hot collector-emitter saturation voltage typical | Manufacturer / primary sourceInfineon Technologies Scope: silicon-die Conditions: VGE=15 V; IC=25 A; Tvj=150°C Source date: 2015-08-20 |
| Gate-emitter threshold range | Manufacturer / primary sourceInfineon Technologies Scope: silicon-die Conditions: IC=0.85 mA; VGE=VCE; Tvj=25°C Source date: 2015-08-20 |
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Sources and historical context
Infineon Technologies · official-disclosure · source linked
Infineon Technologies · official-disclosure · source linked