EQUIPMENT
ASML's 0.33-NA EUV scanner for 300 mm wafer exposure.
| Identity & fabrication | |
|---|---|
| Process application | Manufacturer / primary sourceASML Scope: tool-model |
| Additional specifications | |
| EUV wavelength | Manufacturer / primary sourceASML Scope: tool-model |
| Projection numerical aperture | Manufacturer / primary sourceASML Scope: tool-model |
| Maximum exposure field | Manufacturer / primary sourceASML Scope: tool-model |
ASML describes a tin-plasma 13.5 nm EUV source and reflective projection optics; its metrology position permits in-situ measurement while another wafer is exposed.
Values below are vendor specifications and the throughput condition must remain attached.
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ASML · official-disclosure · source linked
VLSI Korea