SEMICONDUCTOR REFERENCE

Samsung

Find products, devices, processes and manufacturing tools with specifications and original sources.

Specification query syntax

Use cores, threads, clock, boost, l2, l3, tdp, memory or year with =, >=, <=, > or <. Units: GHz, MB, W, GB. Unknown or conflicting values do not match numeric conditions.

Company

Subtype / application

Entity type

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Process label

Architecture

Imagery

48 recordsSort

soc

Source values retain units and entity scope. Open the citation on the record for conditions. Missing fields are unresearched; conflicting observations remain visible.
Compare	Entity	CPU organization	Clock / peak	Cache	Process label	Die area
	Samsung Exynos 2100Samsung · silicon die · 2021	8CPU cores	2.9 GHzCPU prime peak	unresearched	5nm EUVProcess labelSoC design	unresearched
	Samsung Exynos 2200Samsung · silicon die · 2022	8CPU cores	unresearched	unresearched	4nm EUVProcess labelSoC design	unresearched
	Samsung Exynos mobile processorsSamsung · product family	unresearched	unresearched	unresearched	unresearched	unresearched
	Samsung Exynos 2400Samsung · silicon die · 2023	10CPU cores	3.2 GHzCPU prime peak	unresearched	4 nm FinFETProcess	unresearched
	Samsung Exynos 2500Samsung · silicon die · 2025	10CPU cores	3.3 GHzCPU prime peak	unresearched	3 nm Gate-All-Around (GAA)Process	unresearched
	Samsung Exynos 2600Samsung · silicon die · 2025	10CPU cores	unresearched	unresearched	2 nm GAAProcess	unresearched
	Samsung Exynos 2400eSamsung · silicon die · 2024	unresearched	3.11 GHzCPU prime peak	unresearched	4 nmProcess	unresearched
	Samsung Exynos 1480Samsung · silicon die	unresearched	unresearched	unresearched	4 nmProcess	unresearched
	Samsung Exynos 1580Samsung · silicon die	unresearched	unresearched	unresearched	4 nm EUVProcess	unresearched
	Samsung Exynos 9820Samsung · silicon die	unresearched	unresearched	unresearched	8nm FinFETProcess	unresearched

process

Vendor PPA claims retain their own reference process and conditions. Node labels are not physical gate dimensions. Missing fields are unresearched; conflicting observations remain visible.
Compare	Entity	Transistor integration	Performance claim	Power claim	Density definition	PPA baseline
	Samsung SF2Samsung · process variant	GAATransistor architecture	12 %Performance improvement	25 %Power efficiency improvement	unresearched	Samsung SF3 (2023 disclosure)PPA baseline

specimen

Source values retain units and entity scope. Open the citation on the record for conditions. Missing fields are unresearched; conflicting observations remain visible.
Compare	Entity	Subject	Package	Die area
	Samsung Galaxy S10 — teardown specimenSamsung · physical specimen	unresearched	unresearched	unresearched