SEMICONDUCTOR REFERENCE

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Find products, devices, processes and manufacturing tools with specifications and original sources.

8 recordsSort

material

Vendor PPA claims retain their own reference process and conditions. Node labels are not physical gate dimensions. Missing fields are unresearched; conflicting observations remain visible.
Compare	Entity	Material / stage	Application	Technology
	SiliconIndustry · concept	unresearched	unresearched	unresearched

wafer

Vendor PPA claims retain their own reference process and conditions. Node labels are not physical gate dimensions. Missing fields are unresearched; conflicting observations remain visible.
Compare	Entity	Material / stage	Application	Technology
	Silicon waferIndustry · concept	unresearched	unresearched	unresearched

process stage

Vendor PPA claims retain their own reference process and conditions. Node labels are not physical gate dimensions. Missing fields are unresearched; conflicting observations remain visible.
Compare	Entity	Material / stage	Application	Technology
	Back end of lineIndustry · concept	unresearched	unresearched	unresearched

process

Vendor PPA claims retain their own reference process and conditions. Node labels are not physical gate dimensions. Missing fields are unresearched; conflicting observations remain visible.
Entity	Transistor integration	Performance claim	Power claim	Density definition	PPA baseline
TSMC N7TSMC · process variant	unresearched	unresearched	unresearched	unresearched	unresearched
Intel 14 nm (2014 disclosure)Intel · process variant · 2014	Second-generation tri-gate (FinFET)Transistor structure	unresearched	unresearched	unresearched	unresearched
TSMC N2TSMC · process variant	NanosheetTransistor architecture	10–15 %Performance improvement	25–30 %Power reduction	not found	TSMC N3 (2022 disclosure)PPA baseline
Samsung SF2Samsung · process variant	GAATransistor architecture	12 %Performance improvement	25 %Power efficiency improvement	unresearched	Samsung SF3 (2023 disclosure)PPA baseline

soi cmos

Source values retain units and entity scope. Open the citation on the record for conditions. Missing fields are unresearched; conflicting observations remain visible.
Compare	Entity	Device family	Gate geometry	Material / substrate	Polarity / configuration	Application
	IBM 45-nm SOI CMOS technologyIBM · process variant · 2006	SOI CMOSDevice family	unresearched	silicon-on-insulatorSubstrate	unresearched	high-performance CMOSApplication

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Source values, conditions and entity scope stay together.

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Cross-foundry PPA is not directly comparable: each vendor uses a different reference node, test design and density definition. Percentage improvements below do not identify a winner.

Specification / evidence	TSMC N7process-variant
Transistor technology	official-disclosure · sourcedScope: process-variantSource ↗
Volume production year	official-disclosure · sourcedScope: process-variantSource ↗

Measured benchmarks must include workload/version, configuration, power mode and date. Theoretical peaks and vendor claims are not measured benchmark results.

Samsung SF2 / TSMC N2 — PPA and reference conditions