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SEMICONDUCTOR REFERENCE

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Find products, devices, processes and manufacturing tools with specifications and original sources.

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4 records

process

Vendor PPA claims retain their own reference process and conditions. Node labels are not physical gate dimensions. Missing fields are unresearched; conflicting observations remain visible.
CompareEntityTransistor integrationPerformance claimPower claimDensity definitionPPA baseline
TSMC N7TSMC · process variant
unresearchedunresearchedunresearchedunresearchedunresearched
Intel 14 nm (2014 disclosure)Intel · process variant · 2014
Second-generation tri-gate (FinFET)Transistor structureunresearchedunresearchedunresearchedunresearched
TSMC N2TSMC · process variant
NanosheetTransistor architecture10–15 %Performance improvement25–30 %Power reductionnot foundTSMC N3 (2022 disclosure)PPA baseline
Samsung SF2Samsung · process variant
GAATransistor architecture12 %Performance improvement25 %Power efficiency improvementunresearchedSamsung SF3 (2023 disclosure)PPA baseline

Samsung SF2 / TSMC N2 — PPA and reference conditions