VLSI KoreaIdeas that connect the dots.
Zen 2
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PROCESS LABELIntel · 10 µm
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PROCESS LABELNVIDIA · 220 nm
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PROCESS LABELNVIDIA · Hardware transform and lighting
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PROCESS LABELIntel · 3 µm
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ARCHITECTURE6502
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ARCHITECTUREZen 3
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PROCESS LABELIntel · 0.8 µm
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PROCESS LABELAMD · TSMC 7nm FinFET
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ARCHITECTUREAmpere
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PROCESS LABELNVIDIA · 7 nm
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ARCHITECTUREHopper
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PROCESS LABELNVIDIA · TSMC 4N
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PROCESS LABELNVIDIA · TSMC 4N customized for NVIDIA
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PROCESS LABELApple · 5 nm
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PROCESS LABELApple · Second-generation 5 nm
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PROCESS LABELApple · 3 nm
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PROCESS LABELApple · Second-generation 3 nm
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ARCHITECTURE64-bit Kryo CPU
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PROCESS LABELQualcomm · 4 nm
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ARCHITECTUREArm Cortex-X1 / Cortex-A78 / Cortex-A55
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PROCESS LABELSamsung · 5nm EUV
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PROCESS LABELSamsung · 5 nm EUV
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ARCHITECTUREArm CPU + RDNA 2 GPU
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PROCESS LABELSamsung · 4nm EUV
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PROCESS LABELSamsung · 4 nm EUV
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PROCESS LABELSamsung · Single camera 200MP (Max), Single camera 108MP @30 fps, Dual camera 64MP+36MP @30 fps
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ARCHITECTUREPOWER
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PROCESS LABELIBM · 7 nm
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ARCHITECTURECustom Dojo ISA
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PROCESS LABELTesla · TSMC 7nm
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PROCESS LABELTesla · 354 nodes
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PROCESS LABELApple · second-generation 3 nm
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PROCESS LABELApple · Third-generation 3 nm
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PROCESS LABELApple · TSMC N3P
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PROCESS LABELSamsung · 4 nm FinFET
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PROCESS LABELSamsung · Single camera 320MP (Max), Single camera 108MP @30 fps, Dual camera 64MP+32MP
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PROCESS LABELSamsung · 3 nm Gate-All-Around (GAA)
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PROCESS LABELSamsung · 2 nm GAA
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PROCESS LABELSamsung · 108 MP at 30 fps
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PROCESS LABELSamsung · 64 MP + 32 MP
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PROCESS LABELMediaTek · Third-generation TSMC 4 nm
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PROCESS LABELMediaTek · Second-generation TSMC 3 nm
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PROCESS LABELMediaTek · null
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PROCESS LABELMediaTek · TSMC N3P
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PROCESS LABELMediaTek · 3 nm
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PROCESS LABELQualcomm · 3 nm
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PROCESS LABELHuawei / HiSilicon · 5 nm
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PROCESS LABELHuawei / HiSilicon · SMIC 7 nm N+2
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PROCESS LABELHuawei / HiSilicon · SMIC N+3
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ARCHITECTUREZen2
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ARCHITECTUREFixed-pipline
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PROCESS LABELSamsung · 4 nm
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PROCESS LABELGoogle · TSMC 3 nm
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PROCESS LABELMediaTek · 4 nm
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PROCESS LABELMediaTek · TSMC N6 (6nm-class)
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PROCESS LABELSamsung · Single camera 200MP (Max), Single camera 64MP @30 fps, Dual camera 32MP+32MP @30 fps
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PROCESS LABELSamsung · 8nm FinFET
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PROCESS LABELAMD · 7 nm
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PROCESS LABELIntel · Intel 8086
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PROCESS LABELAMD · GloFo 14LPP
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PROCESS LABELAMD · TSMC N7
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PROCESS LABELAMD · GloFo 12LP
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ARCHITECTUREKryo 680 / Adreno 660
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PROCESS LABELQualcomm · 5 nm
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PROCESS LABELQualcomm · Qualcomm Hexagon 780
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ARCHITECTURENVIDIA Ada Lovelace
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PROCESS LABELNVIDIA · 12 GPCs
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PROCESS LABELNVIDIA · 72 TPCs
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PROCESS LABELNVIDIA · 144 SMs
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ARCHITECTUREArm Cortex-A73 / Cortex-A53 / Cortex-A35
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PROCESS LABELMediaTek · 10 nm
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PROCESS LABELMediaTek · Vision Processing Unit paired with Imagiq 2.0
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PROCESS LABELASML · 300 mm EUV exposure
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PROCESS LABELApplied Materials · dielectric, SiGe and amorphous-silicon films
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PROCESS LABELApplied Materials · 6 wafers
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PROCESS LABELApplied Materials · 180–350 °C
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PROCESS LABELApplied Materials · silicon, STI oxide, polysilicon, tungsten and Cu planarization
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PROCESS LABELApplied Materials · Endpoint monitoring, in-line metrology and APC
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PROCESS LABELApplied Materials · copper hybrid-bonding surfaces
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PROCESS LABELApplied Materials · Copper surface preparation before hybrid-bond annealing
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PROCESS LABELLam Research · conductor etch for transistor, interconnect and memory structures
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PROCESS LABELTokyo Electron · advanced immersion and EUV lithography
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PROCESS LABELKLA · prime, SOI, epitaxial and engineered bare wafers
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PROCESS LABELASM · 300 mm advanced transistor and memory layers
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PROCESS LABELSCREEN Semiconductor Solutions · 300 mm single-wafer cleaning
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PROCESS LABELSCREEN Semiconductor Solutions · dopant activation and low-thermal-budget anneal
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PROCESS LABELSCREEN Semiconductor Solutions · Strictly controlled low oxygen
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PROCESS LABELHitachi High-Tech · EUV production inspection and die-to-database measurement
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PROCESS LABELCanon · advanced packaging, RDL, TSV and plating-mask patterning
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PROCESS LABELNikon · 300 mm ArF immersion patterning
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PROCESS LABELAdvantest · engineering, wafer-sort and final test for digital, RF, analog and power ICs
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PROCESS LABELTeradyne · mobile processors, RF, microprocessors, SerDes and PMICs
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PROCESS LABELDISCO · up-to-150 mm wafer and square-workpiece dicing
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PROCESS LABELOnto Innovation · advanced IC substrates and panel-level packaging
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PROCESS LABELNova · XPS and low-energy XRF materials characterization
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PROCESS LABELAxcelis · high-energy semiconductor ion implantation
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PROCESS LABELVeeco · As/P optoelectronic epitaxy for microLEDs, lasers and VCSELs
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PROCESS LABELEV Group · collective die-to-wafer fusion and hybrid bonding
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PROCESS LABELEV Group · Up to six modules
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