마우스로 더 가까이 2.5× · 움직여서 탐색 Image courtesy of Chipwise · Used with permission · Die photograph · Resized and format-converted for display; original image content and watermarks preserved. Origin & contributions Original source · Retrieved 2026-09-09
Chipwise / NanoPhysics · photographer · Included in this image
Image courtesy of Chipwise · Used with permission. Link the original Chipwise source page and retain its markings and credits. Permission reported by the Museum operator on 2026-09-09. Display resizing and format conversion only; no removal of annotations or watermarks. No onward redistribution or comparison-export licence is granted by the Museum.
SILICON DESIGN / 2025
Qualcomm Snapdragon 8 Elite Gen 5 8코어 Oryon CPU와 트리플 20비트 AI ISP를 갖춘 3 nm 플래그십입니다.
사양 25 SOURCE-LINKED FIELDS Identity & fabrication CPU & clock domains Graphics AI & security Memory & interfaces Camera, video & display Connectivity & devices Packaging, power & physical analysis Identity & fabrication Year 2025 Scope: silicon-die
Source date: 2025-09-24
Year identifies first public introduction where a dated launch is available; see record notes for exceptions.
Process 3 nm Scope: silicon-die
Foundry TSMC Scope: silicon-die
Source date: 2026-02-25
Independent analyst attribution.
CPU & clock domains CPU Third-generation Qualcomm Oryon Scope: silicon-die
Source date: 2025-09-24
CPU prime cores 2 cores up to 4.74 GHz Scope: silicon-die
Current Rev B brief includes a 4.74 GHz version and a 4.6 GHz version. Check the specific device/SKU; this is not every launch model’s clock.
CPU performance cores 6 cores up to 3.62 GHz Scope: silicon-die
Graphics GPU Qualcomm Adreno Scope: silicon-die
GPU dedicated memory 18 MB Adreno HPM Scope: silicon-die
GPU APIs OpenGL ES 3.2; OpenCL 3.0 FP; Vulkan 1.3 Scope: silicon-die
AI & security NPU configuration 12 scalar + 8 vector + 1 accelerator Scope: silicon-die
NPU precision INT2 / INT4 / INT8 / INT16 / FP8 / FP16 Scope: silicon-die
Memory & interfaces Memory LPDDR5X, up to 5300 MHz; capacity up to 24 GB Scope: silicon-die
Storage UFS 4.1 Scope: silicon-die
USB USB 3.1 Gen 2 Scope: silicon-die
Camera, video & display ISP triple 20-bit AI ISP Scope: silicon-die
Display 4K+ at 120 Hz Scope: silicon-die
Camera modes Up to 320 MP; 108 MP single or 48 MP triple at 30 fps with zero shutter lag Scope: silicon-die
Video capture 4K at 120 fps; APV support Scope: silicon-die
Video playback 8K HDR at 60 fps Scope: silicon-die
Connectivity & devices Modem Qualcomm X85, up to 12.5 Gbps down / 3.7 Gbps up Scope: silicon-die
Connectivity FastConnect 7900; Wi-Fi 7; Bluetooth 6.0; UWB Scope: silicon-die
Packaging, power & physical analysis Reported die width 10.57 mm Estimated Scope: silicon-die
Source date: 2026-02-25
Original analyst catalog value. Public entry gives dimensions but does not document calibration, die boundary convention, specimen provenance or uncertainty.
Reported die height 11.94 mm Estimated Scope: silicon-die
Source date: 2026-02-25
Original analyst catalog value. Public entry gives dimensions but does not document calibration, die boundary convention, specimen provenance or uncertainty.
Reported die area 126.21 mm² Estimated Scope: silicon-die
Source date: 2026-02-25
Original analyst catalog value. Public entry gives dimensions but does not document calibration, die boundary convention, specimen provenance or uncertainty.
Verified die geometry Unresearched Scope: silicon-die
Source date: 2025-09-24
No source meeting calibrated geometry requirements accepted in this scout pass. Reported measurements, if present, remain separately labeled.
수정 근거 제안 다이 상세 전시 열기
근거가 있는 연결 2 SOURCE-LINKED RELATIONSHIPS 개요 출처와 이력 토론
기록의 신원과 범위 silicon design · Qualcomm Snapdragon 8 Elite Gen 5
이 사진이 보여주는 것 Snapdragon 8 Elite gen 5. See source caption; no chip layer inferred beyond source evidence
VLSI Korea
